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Ka Band Power GaAs MESFET Chip
AFM08P2-000 Features
s 24 dBm Output Power @ 18 GHz s High Power Added Efficiency, 20% s Broadband Operation, DC-40 GHz s 0.25 m Ti/Pd/Au Gates s Passivated Surface s Through-Substrate Via Hole Grounding
Chip thickness = 0.1 mm.
Drain
0.110 mm
0.395 mm
s High Associated Gain, 8.5 dB @ 18 GHz
Gate 0.327 mm 0.655 mm
0.110 mm
Description
The AFM08P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 m and a total gate periphery of 800 m. The device has excellent gain and power performance through 40 GHz, making it suitable for a wide range of commercial and military applications in oscillator and amplifier circuits. It employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part. Through-substrate via holes are incorporated into the chip to facilitate low inductance grounding of the source for improved high frequency and high gain performance.
Absolute Maximum Ratings
Characteristic Drain to Source Voltage (VDS) Gate to Source Voltage (VGS) Drain Current (IDS) Gate Current (IGS) Total Power Dissipation (PT) Storage Temperature (TST) Channel Temperature (TCH) Value 6V -4 V IDSS 2 mA 1.4 W -65 to +150C 175C
Electrical Specifications at 25C
Parameter Saturated Drain Current (IDSS) Transconductance (gm) Pinch-off Voltage (VP) Gate to Drain Breakdown Voltage (Vbgd) Output Power at 1 dB Compression (P1 dB) Gain at 1 dB Compression (G1 dB) Power Added Efficiency (add) Output Power at 1 dB Compression (P1 dB) Gain at 1 dB Compression (G1 dB) Power Added Efficiency (add) Thermal Resistance (JC) TBASE = 25C VDS = 5 V, IDS = 140 mA, F = 30 GHz VDS = 5 V, IDS = 140 mA, F = 18 GHz Test Conditions VDS = 2 V, VGS = 0 V VDS = 5 V, IDS = 2.0 mA IGD = 800 A Min. 175.0 120.0 1.0 8.0 Typ. 265.0 160.0 3.0 12.0 24.0 8.5 20.0 23.0 4.5 10.0 120.0 5.0 Max. 360.0 Unit mA mS -V -V dBm dB % dBm dB % C/W
Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com
Specifications subject to change without notice. 6/99A
1
Ka Band Power GaAs MESFET Chip
AFM08P2-000
Typical Performance Data
Total Power Dissipation PT (W)
300 240 VGS = 0 V -0.5 V 1.50 1.25 1.00 0.75 0.50 0.25 0 0 50 100 150 200
lDS (mA)
180 -1.0 V 120 -1.5 V 60 0 0 1 2 3 4 5 -2.0 V -2.5 V
VDS (V)
TBASE (C)
I-V
Power Derating
2
Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com
Specifications subject to change without notice. 6/99A
Ka Band Power GaAs MESFET Chip
AFM08P2-000
Typical S-Parameters (VDS = 5 V, IDS = 140 mA)
Freq. (GHz) 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 S11 Mag. 0.922 0.886 0.858 0.846 0.833 0.830 0.827 0.826 0.826 0.826 0.826 0.826 0.827 0.827 0.828 0.827 0.830 0.833 0.834 0.833 0.826 0.824 0.837 0.841 0.851 0.861 0.869 0.873 0.876 0.878 0.879 0.875 0.875 0.873 0.870 0.869 0.866 0.865 0.859 Ang. -60.551 -83.281 -100.870 -114.840 -125.710 -134.240 -141.250 -146.950 -151.670 -155.980 -159.860 -163.530 -167.030 -170.710 -174.110 -177.880 178.710 175.150 171.690 168.290 165.410 164.040 162.480 160.910 160.020 158.950 157.730 157.100 156.340 155.500 154.510 153.200 151.820 149.570 147.470 145.350 142.450 139.560 137.290 Mag. 6.183 5.297 4.511 3.873 3.349 2.937 2.594 2.320 2.099 1.912 1.757 1.626 1.511 1.412 1.319 1.238 1.157 1.082 1.006 0.931 0.854 0.774 0.725 0.675 0.632 0.593 0.561 0.530 0.504 0.482 0.463 0.444 0.429 0.415 0.398 0.382 0.361 0.342 0.303 S21 Ang. 137.340 121.790 109.080 98.238 89.148 81.086 73.980 67.488 61.486 55.846 50.480 45.189 40.055 34.928 29.877 24.729 19.509 14.691 9.473 4.393 -0.449 -2.962 -5.707 -8.703 -11.155 -13.702 -15.712 -17.951 -19.794 -21.803 -24.305 -26.438 -28.745 -31.738 -34.529 -37.857 -41.301 -44.109 -48.395 Mag. 0.034 0.043 0.048 0.052 0.053 0.053 0.053 0.052 0.051 0.050 0.050 0.050 0.050 0.050 0.051 0.053 0.054 0.055 0.057 0.055 0.054 0.055 0.061 0.065 0.066 0.068 0.072 0.075 0.079 0.084 0.088 0.094 0.100 0.105 0.109 0.111 0.115 0.117 0.121 S12 Ang. 56.434 45.053 37.488 31.412 26.013 22.971 20.266 19.130 18.861 18.901 19.638 20.670 22.571 24.590 27.112 30.441 29.130 30.607 29.948 29.691 28.928 40.109 41.107 41.668 39.422 41.344 42.416 43.221 43.832 44.410 43.920 43.615 42.418 40.012 38.334 36.215 34.590 31.940 28.969 Mag. 0.268 0.276 0.288 0.311 0.330 0.356 0.380 0.403 0.430 0.453 0.473 0.494 0.513 0.529 0.543 0.560 0.579 0.597 0.615 0.634 0.654 0.659 0.685 0.712 0.726 0.749 0.772 0.790 0.800 0.812 0.825 0.830 0.832 0.834 0.830 0.825 0.821 0.822 0.814 S22 Ang. -53.648 -72.863 -86.395 -97.508 -105.520 -111.660 -117.070 -121.090 -124.530 -127.950 -131.070 -134.390 -137.680 -141.300 -144.910 -149.190 -153.840 -158.560 -163.450 -168.500 -173.410 -176.480 -178.940 178.250 176.760 175.380 174.350 173.430 172.620 171.720 170.440 169.140 167.450 164.770 162.000 158.610 154.480 150.320 145.770 k 0.287 0.352 0.448 0.490 0.595 0.660 0.751 0.835 0.911 0.985 1.054 1.107 1.168 1.222 1.256 1.266 1.234 1.237 1.248 1.375 1.567 1.814 1.477 1.317 1.190 1.036 0.864 0.742 0.665 0.574 0.492 0.473 0.439 0.420 0.476 0.519 0.610 0.666 0.846 S21 (dB) 15.824 14.481 13.085 11.760 10.499 9.359 8.280 7.309 6.439 5.630 4.896 4.220 3.584 2.994 2.402 1.851 1.266 0.681 0.056 -0.624 -1.375 -2.221 -2.796 -3.419 -3.980 -4.532 -5.026 -5.517 -5.945 -6.330 -6.693 -7.046 -7.342 -7.631 -8.004 -8.358 -8.842 -9.319 -10.363 MAG (dB) 22.614 20.875 19.764 18.726 18.038 17.440 16.937 16.522 16.156 15.794 14.032 13.123 12.349 11.674 11.108 10.612 10.358 9.976 9.504 8.613 7.567 6.302 6.695 6.786 7.168 8.244 8.934 8.481 8.038 7.595 7.197 6.729 6.340 5.960 5.642 5.349 4.983 4.655 3.978
S-Parameters include the effects of two 0.8 mil diameter bond wires, each 10 mil long, to each of the gate and drain terminals.
Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com
Specifications subject to change without notice. 6/99A
3

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